Ultrafast room temperature NH3 sensing with positively gated reduced graphene oxide field-effect transistors.
نویسندگان
چکیده
Reduced graphene oxide (R-GO) under a positive gate potential (n-type conductance) exhibits an instantaneous response and fast recovery for NH(3) sensing, far superior to the performance in p-mode at zero/negative gate potential. Our findings have important implications for fast, repeatable, room temperature gas detection using graphene/R-GO.
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ورودعنوان ژورنال:
- Chemical communications
دوره 47 27 شماره
صفحات -
تاریخ انتشار 2011